· features · drain current –id= 7a@ tc=25℃ · drain source voltage : vdss= 600v(min) · static drain-source on-resistance : r ds(on) = 1.0ω (max) · avalanche energy specified · fast switching · simple drive requirements · descrition · designed for high efficiency switch mode power supply. · absolute maximum ratings(ta=25℃) symbol parameter value unit vdss drain-source voltage 600 v vgs gate-source voltage-continuous ± 20 v id drain current-continuous 7 a idm drain current-single plused 28 a pd total dissipation @tc=25℃ 125 w t j max. operating junction temperature 150 ℃ t stg storage temperature -55~150 ℃ · thermal characteristics symbol parameter max unit rth j-c thermal resistance, junction to case 1.0 ℃/w rth j-a thermal resistance, junction to ambient 62.5 ℃/w electrical characteristics tc=25℃ unless otherwise specified symbol parameter conditions min max unit v (br)dss drain-source breakdown voltage vgs= 0; id= 0.25ma 600 v vgs(th) gate threshold voltage vds= vgs; id= 0.25ma 2 4 v r ds(on) drain-source on-resistance vgs= 10v; id= 3.5a 1.0 ω igss gate-body leakage current vgs= ± 20v;vds= 0 ± 100 na idss zero gate voltage drain current vds= 600v; vgs= 0 1 μ a vsd forward on-voltage i s= 7a; vgs= 0 1.8